Giovanni Salvatore

A new study led by researchers at Ca’ Foscari University of Venice, in collaboration with ON Semiconductor, University of Naples Federico II, and University of Applied Sciences Kempten, has unveiled a powerful digital approach to designing the future of high-efficiency power electronics. The work, recently accepted for publication in the IEEE Open Journal of Power Electronics, is titled “Multi-Physics Simulations of a 1.2 kV Embedded SiC Prepackage”. The research team includes Saimir Frroku, Ankit Bhushan Sharma, Pierfrancesco Fadini, Klaus Neumaier, Andrea Irace, Till Huesgen, and Giovanni A. Salvatore, who coordinated the study at Ca’ Foscari’s Department of Molecular Sciences and Nanosystems. A New Era for Power Device Packaging Wide-bandgap (WBG) semiconductors such as silicon carbide (SiC) are transforming power electronics thanks to their ability to operate at higher voltages, temperatures, and switching frequencies than traditional silicon. Yet, packaging remains a critical bottleneck—how these chips are physically mounted, cooled, and electrically connected determines the true performance and reliability of a power module. Embedding the SiC chips directly into an insulating substrate represents a breakthrough approach. By eliminating bulky wire bonds and reducing parasitic inductances, embedded packages enable faster and cleaner switching, boosting efficiency and compactness. However, questions of mechanical reliability and heat management have persisted. Digital Twins for Real-World Reliability The Ca’ Foscari team tackled these challenges through multi-physics finite-element simulations, virtually reconstructing a “prepackage” containing two 1.2 kV SiC MOSFETs and exploring different commercial substrates—alumina, silicon nitride, aluminum nitride, and insulated metal boards (IMS). Their thermomechanical “digital twin” captured how heat and mechanical stress propagate during manufacturing and operation, allowing the team to pinpoint design weaknesses long before physical prototyping. Using a Pareto-based optimization, they identified aluminum nitride (AlN) as the most balanced substrate, achieving a thermal resistance of just 0.27 K/W and low mechanical strain levels. Engineering Smarter Structures The simulations also revealed how to strengthen the package against long-term mechanical fatigue. Replacing the traditional solid copper top contact with a pillar-like interconnect geometry reduced creep strain in the silver sintering layer by up to fourfold—a major leap for reliability. Even the cooling rate during manufacturing proved to be a critical factor: above a certain threshold (around 40 K/min), creep deformation virtually disappears, leaving only reversible plastic strain. This insight offers a new lever for process control and reliability enhancement. Toward Scalable, High-Frequency Power Modules By virtually paralleling four optimized prepackages, the researchers demonstrated a compact power module with only 3 nH of stray inductance, suitable for high-frequency, high-efficiency power conversion—crucial for electric vehicles, renewable-energy systems, and data-center power supplies. “These simulations allow us to accelerate innovation while reducing costly trial-and-error fabrication,” explains Giovanni A. Salvatore, senior author of the study. “Digital modeling provides predictive insights into reliability and performance, helping us design the next generation of power modules that are both efficient and robust.” From Simulation to Sustainable Energy Systems The findings open new perspectives for integrating wide-bandgap semiconductors into compact, thermally stable, and manufacturable modules—an essential step toward electrified mobility and renewable-powered grids. The team’s work exemplifies how virtual engineering and experimental design can converge to drive sustainable innovation in advanced electronics. The full article is available at: https://ieeexplore.ieee.org/document/11224018. All image rights and copyrights are reserved by IEEE.

A team of researchers at the Ca’ Foscari University of Venice has developed a new class of sustainable, flexible, and biodegradable materials that could transform the future of wearable technologies, robotics, and green electronics. The study, published in ACS Nano and featured on its supplementary cover, demonstrates how chitosan-based thin films—derived from crustacean biowaste—can be engineered to achieve record piezoelectric performance. Turning waste into innovation Chitosan, a natural polymer obtained from chitin in crustacean shells, is already known for its biocompatibility and biodegradability. By incorporating chitin nanocrystals into chitosan films, the Ca’ Foscari-led team achieved a twofold increase in piezoelectric response. These soft, transparent films are also stretchable up to 40% strain and exhibit a low Young’s modulus (~100 MPa), closely mimicking the elasticity of human tissues. Why it matters Piezoelectric materials are the backbone of sensors, actuators, and energy harvesters. Today, most commercial devices rely on synthetic polymers like PVDF or inorganic ceramics such as PZT, which raise environmental and health concerns due to their toxicity, rigidity, or reliance on fluorinated compounds. The Ca’ Foscari study shows that biobased materials can achieve competitive performance without compromising sustainability. The films are fully biodegradable, scalable in production, and derived from low-cost biowaste—an example of circular economy applied to advanced materials science. Potential applications Because of their softness and biocompatibility, the new chitosan nanocomposites are particularly suited for: A collaborative effort The research was carried out by the LION group (Laboratory for Innovation in Organic and Nanostructured materials) at Ca’ Foscari’s Department of Molecular Sciences and Nanosystems, in collaboration with international partners. The project received support from EU NextGenerationEU programs (PRIN 2022, iNEST ecosystem) and the PRIMA initiative for sustainable bio-based packaging. Looking ahead According to Giovanni Antonio Salvatore, corresponding author of the study, this work “opens the door to a new generation of sustainable-by-design materials for electronics, capable of replacing polluting polymers and bridging the gap between biological systems and technology.” With this breakthrough, Ca’ Foscari University of Venice further strengthens its position at the intersection of materials science, sustainability, and technological innovation. 👉 Read the full article in ACS Nano: https://doi.org/10.1021/acsnano.4c12855

Power MOSFETs are key to modern electronics, enabling efficient power conversion and control in a wide range of applications.  However handling short-circuit events remains a challenge—especially for SiC and GaN devices. The Ferro-Power MOSFET changes the game by integrating ferroelectric materials into the gate, reducing temperature rise and enhancing reliability without modifying the device layout or control electronics. Simulations of a 1.2 kV SiC MOSFET show up to 31% lower temperatures and 42% less current surge during faults, making this a breakthrough for automotive and industrial power systems. With advances in CMOS-compatible hafnium oxide, this innovation is set to shape the future of power semiconductors! #PowerElectronics #MOSFET #SiC #GaN #Innovation #TechBreakthrough #Ferroelectrics #Hafnium Oxide   Check out our paper (in collaboration with Prof. A. Irace and L. Maresca from UniNa):  The Ferro-Power MOSFET: Enhancing Short-circuit Robustness in Power Switches with a Ferroelectric Gate Stack